tdsl31.0 vishay semiconductors 1 (6) rev. a2, 05-oct-00 www.vishay.com document number 83122 low current 10 mm seven segment display color type circuitry high efficiency red tdsl3150 common anode high efficiency red tdsl3160 common cathode description the tdsl31.0 series are 10 mm character seven segment low current led displays in a very compact package. the displays are designed for a viewing distance up to 6 meters and available in high efficiency red. the grey package surface and the evenly lighted untinted segments provide an optimum on-off contrast. all displays are categorized in luminous intensity groups. that allows users to assemble displays with uniform appearence. typical applications include instruments, panel meters, point-of-sale terminals and household equipment . features low power consumption suitable for dc and multiplex operation evenly lighted segments grey package surface untinted segments luminous intensity categorized wide viewing angle 96 11507 applications panel meters test- and measure- equipment point-of-sale terminals control units
tdsl31.0 vishay semiconductors 2 (6) rev. a2, 05-oct-00 www.vishay.com document number 83122 absolute maximum ratings t amb = 25 c, unless otherwise specified tdsl3150 / tdsl3160 parameter test conditions symbol value unit reverse voltage per segment v r 6 v dc forward current per segment i f 15 ma peak forward current per segment i fm 45 ma surge forward current per segment t p 10 s (non repetitive) i fsm 100 ma power dissipation t amb 45 c p v 320 mw junction temperature t j 100 c operating temperature range t amb 40 to + 85 c storage temperature range t stg 40 to + 85 c soldering temperature t 3 sec, 2mm below seating plane t sd 260 c thermal resistance led junction/ambient r thja 180 k/w optical and electrical characteristics t amb = 25 c, unless otherwise specified high efficiency red ( tdsl3150 , tdsl3160 ) parameter test conditions type symbol min typ max unit luminous intensity per segment 1) i f = 2 ma i v 180 260 cd yg (digit average) 1) i f = 5 ma i v 1000 cd i f = 20 ma, t p /t =0.25 i v 1300 cd dominant wavelength i f = 2 ma d 612 625 nm peak wavelength i f = 2 ma p 635 nm angle of half intensity i f = 2 ma j 50 deg forward voltage per segment i f = 2 ma v f 1.8 2.4 v gg i f = 20 ma v f 2.7 3 v reverse voltage per segment i r = 10 a v r 6 20 v junction capacitance v r = 0, f = 1 mhz c j 30 pf 1) i vmin and i v groups are mean values of segments a to g
tdsl31.0 vishay semiconductors 3 (6) rev. a2, 05-oct-00 www.vishay.com document number 83122 typical characteristics (t amb = 25 c, unless otherwise specified) 020406080 0 100 200 300 400 500 p power dissipation ( mw ) v t amb ambient temperature ( c ) 100 95 11483 figure 1. power dissipation vs. ambient temperature 0 5 10 15 20 30 020406080 i forward current ( ma ) f t amb ambient temperature ( c ) 100 95 11484 25 figure 2. forward current vs. ambient temperature 0.4 0.2 0 0.2 0.4 0.6 95 10082 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i relative luminous intensity v rel figure 3. rel. luminous intensity vs. angular displacement 01234 0.1 1 10 100 v f forward voltage ( v ) 5 95 10050 i forward current ( ma ) f high efficiency red t p /t=0.001 t p =10 s figure 4. forward current vs. forward voltage 0 95 10051 20 40 60 80 100 i relative luminous intensity v rel t amb ambient temperature ( c ) high efficiency red i f =2ma 0 0.4 0.8 1.2 1.6 2.0 figure 5. rel. luminous intensity vs. ambient temperature 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10321 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t i relative luminous intensity v rel 2.0 high efficiency red figure 6. rel. lumin. intensity vs. forw. current/duty cycle
tdsl31.0 vishay semiconductors 4 (6) rev. a2, 05-oct-00 www.vishay.com document number 83122 0.1 1 10 0.01 0.1 1 10 100 100 95 10061 i relative luminous intensity v rel i f forward current ( ma ) high efficiency red figure 7. relative luminous intensity vs. forward current 590 610 630 650 670 0 0.2 0.4 0.6 0.8 1.2 690 95 10040 i relative luminous intensity v rel wavelength ( nm ) 1.0 high efficiency red figure 8. relative luminous intensity vs. wavelength
tdsl31.0 vishay semiconductors 5 (6) rev. a2, 05-oct-00 www.vishay.com document number 83122 dimensions in mm 95 11343 pin connections a f e g d c b dp 1 2 3 4 5 10 9 8 7 6 1g 2f 3 a ( c ) 4e 5d 6dp 7c 8 a ( c ) 9b 10 a 96 11678
tdsl31.0 vishay semiconductors 6 (6) rev. a2, 05-oct-00 www.vishay.com document number 83122 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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